| PART |
Description |
Maker |
| CY7C1625KV18 CY7C1614KV18 |
144-Mbit QDR? II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1613KV18 CY7C1615KV18 |
144-Mbit QDR? II SRAM Four-Word Burst Architecture
|
Cypress Semiconductor
|
| R1QJA4436RBG R1QJA4418RBG R1QBA4418RBG R1QBA4436RB |
144-Mbit DDRII SRAM 2-word Burst
144-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QLA4418RBG-25IB0 R1QLA4418RBG-25IA0 R1QLA4436RBG |
144-Mbit DDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency) with ODT
|
Renesas Electronics Corporation
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| R1QNA4436RBG-15 |
144-Mbit QDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
|
Renesas Electronics Corporation
|
| R1Q4A4436RBG-33IB0 |
144-Mbit DDR II SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
| M3H71FAD-R M3H15TDD M3H52TCD-R MH75FBD MH75FAG MH7 |
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
16-bit, 75 MIPS, 2.5v, 2 serial ports, host port, 80 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 20KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind
16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
16-Bit, 75 MIPS, 2.5V, 2 Serial Ports, Host Port, 40 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm.
500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: 576 ball SBGA; No of Pins: 576; Temperature Range: Ind
300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 625 ball BGA; No of Pins: 625; Temperature Range: Ind
500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: BGA THERM ENH W/ HEATSINK; No of Pins: 576; Temperature Range: Ind
300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 484 ball BGA; No of Pins: 484; Temperature Range: Ind
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
|
MTRONPTI
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1472BV25-167BZXC CY7C1472BV25-167BZXI CY7C1472 |
2M X 36 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL垄芒 Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
